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HomeIndustrial & ScientificIndustrial ElectricalSemiconductor ProductsTransistorsHFET Transistors10Pcs 2N60 TO251 N Channel Power MOSFET Transistor Fast Switching
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UGX 7,546
UGX 12,16638%
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These N-channel MOSFET feature fast switching time, low on-resistance, low gate charge. These N-channel MOSFET is usually well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology.
Specification:
| Model No. | 2N60 |
| Drain Source Voltage | 600V |
| Drain Current | 2A |
| Package | TO-251 |
| Pin Size ( L x Pitch) | Approx. 8 x 2 mm |
| Total Size (L x W x H) | Approx. 15 x 6 x 2 mm |
Package Includes:
- 10 x N-Channel MOSFET
N-channel power MOSFET low gate charge 2A 600V 2N60 10pcs
Specifications
Key Features
- These N-channel MOSFET feature fast switching time, low on-resistance, low gate charge. These N-channel MOSFET is usually well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology.
- Specification:Model No.2N60Drain Source Voltage600VDrain Current2APackageTO-251Pin Size ( L x Pitch)Approx. 8 x 2 mmTotal Size (L x W x H)Approx. 15 x 6 x 2 mmPackage Includes:10 x N-Channel MOSFET
- N-channel power MOSFET low gate charge 2A 600V 2N60 10pcs
- These N-channel MOSFET feature fast switching time, low on-resistance, low gate charge. These N-channel MOSFET is usually well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology.
- Specification:Model No.2N60Drain Source Voltage600VDrain Current2APackageTO-251Pin Size ( L x Pitch)Approx. 8 x 2 mmTotal Size (L x W x H)Approx. 15 x 6 x 2 mmPackage Includes:10 x N-Channel MOSFET
What’s in the box
10 x N-Channel MOSFET
Specifications
- SKU: GE779IP4EMIF5NAFAMZ
- Model: N/A
- Production Country: China
- Size (L x W x H cm): 18.00 x 15.00 x 1.50
- Weight (kg): 0.163
- Main Material: N/A
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10Pcs 2N60 TO251 N Channel Power MOSFET Transistor Fast Switching
UGX 7,546
UGX 12,16638%
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