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5 Pieces Power MOSFET Transistor 600V 10A 3 Pin To220F

UGX 14,651
UGX 19,83126%

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This latest technology has been especially designed to minimize on -state resistance,have a high rugged characteristics. This devices is specially well suited for high efficiency switch power supplies , power factor correction, UPS and a electronic lamp ballast base on half bridge.

Specification:

Model No.10N60
Drain Source Voltage600V
Drain Current10A
PackageTO-220F
Mounting Hole DiameterApprox. 3mm
Pin Size ( L x Pitch)Approx. 13 x 2 mm
Total Size (L x W x H)Approx. 29 x 10 x 4mm

Package Includes:

  • 5 x N-Channel MOSFET

N-Channel Power MOSFET 10N60

Specifications

Key Features

  • This latest technology has been especially designed to minimize on -state resistance,have a high rugged characteristics. This devices is specially well suited for high efficiency switch power supplies , power factor correction, UPS and a electronic lamp ballast base on half bridge.Specification:Model No.10N60Drain Source Voltage600VDrain Current10APackageTO-220FMounting Hole DiameterApprox. 3mmPin Size ( L x Pitch)Approx. 13 x 2 mmTotal Size (L x W x H)Approx. 29 x 10 x 4mmPackage Includes:5 x N-Channel MOSFET
  • N-Channel Power MOSFET 10N60
  • This latest technology has been especially designed to minimize on -state resistance,have a high rugged characteristics. This devices is specially well suited for high efficiency switch power supplies , power factor correction, UPS and a electronic lamp ballast base on half bridge.Specification:Model No.10N60Drain Source Voltage600VDrain Current10APackageTO-220FMounting Hole DiameterApprox. 3mmPin Size ( L x Pitch)Approx. 13 x 2 mmTotal Size (L x W x H)Approx. 29 x 10 x 4mmPackage Includes:5 x N-Channel MOSFET
  • N-Channel Power MOSFET 10N60
  • This latest technology has been especially designed to minimize on -state resistance,have a high rugged characteristics. This devices is specially well suited for high efficiency switch power supplies , power factor correction, UPS and a electronic lamp ballast base on half bridge.Specification:Model No.10N60Drain Source Voltage600VDrain Current10APackageTO-220FMounting Hole DiameterApprox. 3mmPin Size ( L x Pitch)Approx. 13 x 2 mmTotal Size (L x W x H)Approx. 29 x 10 x 4mmPackage Includes:5 x N-Channel MOSFET

What’s in the box

5 x N-Channel MOSFET

Specifications

  • SKU: GE779IP4LH2F9NAFAMZ
  • Model: N/A
  • Production Country: China
  • Size (L x W x H cm): 18.79 x 15.79 x 2.85
  • Weight (kg): 0.168
  • Main Material: N/A

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5 Pieces Power MOSFET Transistor 600V 10A 3 Pin To220F

5 Pieces Power MOSFET Transistor 600V 10A 3 Pin To220F

UGX 14,651
UGX 19,83126%
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